Thickness dependent transition from the 1T$^\prime$ to Weyl semimetal phase in ultrathin MoTe$ _{2} $: Electrical transport, Noise and Raman studies
Manabendra Kuiri, Subhadip Das, D. V. S. Muthu, Anindya Das, A K Sood

TL;DR
This study investigates the phase transition from 1T' to Weyl semimetal in ultrathin MoTe2, revealing thickness-dependent electronic and vibrational properties through electrical, noise, and Raman measurements.
Contribution
It provides the first detailed analysis of phase transition and transport properties in ultrathin MoTe2, highlighting thickness-dependent phenomena not observed in bulk materials.
Findings
Thickness-dependent transition temperatures at 208 K and 178 K.
Observation of electron-phonon interaction effects in Raman spectra.
Resistivity behavior indicating electron-electron interactions at low temperatures.
Abstract
Bulk 1T-MoTe shows a structural phase transition from 1T to Weyl semimetallic (WSM) phase at 240 K. This phase transition and transport properties in the two phases have not been investigated on ultra-thin crystals. Here we report electrical transport, noise and Raman studies in ultra-thin 1T-MoTe ( 5 to 16 nm thick) field-effect transistors (FETs) devices as a function of temperature. The electrical resistivities for thickness 16 nm and 11 nm show maxima at temperatures 208 K and 178 K, respectively, making a transition from semiconducting to semi-metallic phase, hitherto not observed in bulk samples. Raman frequencies and linewidths for 11nm thick crystal show change around 178 K, attributed to additional contribution to the phonon self-energy due to enhanced electron-phonon interaction in the WSM phase. Further, the…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
