Thermoelectric properties of Bi2O2Se single crystals
Jialu Wang, Wanghua Hu, Zhefeng Lou, Zhuokai Xu, Xiaohui Yang, Tao, Wang, Xiao Lin

TL;DR
This study investigates the thermoelectric properties of Bi2O2Se single crystals, revealing high electron mobility, low thermal conductivity, and improved figure of merit compared to polycrystals, attributed to strong phonon scattering.
Contribution
First comprehensive analysis of thermoelectric properties of Bi2O2Se single crystals, highlighting enhanced performance and underlying phonon scattering mechanisms.
Findings
Electron mobility up to 250 cm²V⁻¹s⁻¹
Thermal conductivity as low as 2 W/m·K
Figure of merit of 0.188 at 390 K
Abstract
Bismuth oxyselenide (BiOSe) attracts great interest as a potential n-type complement to p-type thermoelectric oxides in practical applications. Previous investigations were generally focused on polycrystals. Here, we performed a study on the thermoelectric properties of BiOSe single crystals. Our samples exhibit electron mobility as high as 250 cmV.s and thermal conductivity as low as W.m.K near room temperature. The maximized figure of merit is yielded to be 0.188 at 390 K, higher than that of polycrystals. Consequently, a rough estimation of the phonon mean free path () from the kinetic model amounts to 12 at 390 K and follows a behavior. An extrapolation of to higher temperatures indicates that this system approaches the Ioffe-Regel limit at about 1100 K. In light of the phonon…
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