TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators
Akshay A. Murthy, Jae-Yel Lee, Cameron Kopas, Matthew J. Reagor,, Anthony P. McFadden, David P. Pappas, Mattia Checchin, Anna Grassellino,, Alexander Romanenko

TL;DR
This study uses TOF-SIMS to analyze how fabrication processes introduce impurities and defects in Nb superconducting resonators, impacting their coherence and performance in quantum computing applications.
Contribution
It provides detailed chemical and structural insights into Nb thin films and qubit structures, linking fabrication conditions to sources of decoherence.
Findings
Oxide and silicide regions form at Nb/Si interfaces.
Impurities like niobium hydrides and carbides are incorporated during fabrication.
Halogen species are distributed throughout the thin films.
Abstract
Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of s, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated…
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Taxonomy
TopicsIon-surface interactions and analysis · Advanced Materials Characterization Techniques · Diamond and Carbon-based Materials Research
