Realization of A Non-Markov Chain in A Single 2D Crystal RRAM

TL;DR

This paper demonstrates a novel 2D mica-based RRAM device that realizes a non-Markov process within a single device by controlling potassium ion movement, enabling complex memory functions with reduced system complexity.

Contribution

It introduces the first non-Markov chain algorithm implemented in a single 2D mica RRAM device, revealing ionic dynamics and enabling advanced memory functionalities.

Findings

Achieved non-Markov process in a single RRAM device

Demonstrated ionic movement dependent on voltage and history

Showed high on/off ratio and stable memory performance

Abstract

The non-Markov processes widely exist in thermodymanic processes, while it usually requires packing of many transistors and memories with great system complexity in traditional device architecture to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices show potential for next-generation computing systems with much-reduced complexity. Here, we achieve the non-Markov chain in an individual RRAM device based on 2D mica with a vertical metal/mica/metal structure. We find that the internal potassium ions (K+) in 2D mica gradually move along the direction of the applied electric field, making the initially insulating mica conductive. The accumulation of K+ is tuned by electrical field, and the 2D-mica RRAM possesses both unipolar and bipolar memory windows, high on/off ratio, decent stability and repeatability.Importantly, the non-Markov chain algorithm is established for the first time in a single RRAM, in which the movement of K+ is dependent on the stimulated voltage as well as their past states. This work not only uncovers the inner ionic conductivity of 2D mica, but also opens the door for such novel RRAM devices with numerous functions and applications.