Approaching the Basis Set Limit in Gaussian-Orbital-Based Periodic Calculations with Transferability: Performance of Pure Density Functionals for Simple Semiconductors
Joonho Lee, Xintian Feng, Leonardo A. Cunha, Jerome F. Gonthier,, Evgeny Epifanovsky, Martin Head-Gordon

TL;DR
This paper develops a systematic Gaussian basis set approach for solids, demonstrating reduced basis set errors and benchmarking functional performance on semiconductors, advancing quantum chemistry simulations of materials.
Contribution
Introduces a transferability-focused uncontracted GTO basis set for solids and benchmarks its effectiveness in reducing basis set errors and evaluating functional accuracy.
Findings
Basis set incompleteness error less than 0.7 m$E_h$ per atom with the new basis sets.
B97M-rV functional performs comparably to other modern mGGAs in band gap predictions.
Uncontracted basis sets improve convergence but require careful application.
Abstract
Simulating solids with quantum chemistry methods and Gaussian-type orbitals (GTOs) has been gaining popularity. Nonetheless, there are few systematic studies that assess the basis set incompleteness error (BSIE) in these GTO-based simulations over a variety of solids. In this work, we report a GTO-based implementation for solids, and apply it to address the basis set convergence issue. We employ a simple strategy to generate large uncontracted (unc) GTO basis sets, that we call the unc-def2-GTH sets. These basis sets exhibit systematic improvement towards the basis set limit as well as good transferability based on application to a total of 43 simple semiconductors. Most notably, we found the BSIE of unc-def2-QZVP-GTH to be smaller than 0.7 m per atom in total energies and 20 meV in band gaps for all systems considered here. Using unc-def2-QZVP-GTH, we report band gap benchmarks of…
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