Spin-orbit torque: Moving towards two-dimensional van der Waals heterostructures

TL;DR

This paper reviews recent advances in spin-orbit torque (SOT) for magnetic switching, emphasizing the potential of two-dimensional van der Waals heterostructures and topological materials for low-power spintronic devices.

Contribution

It introduces emerging approaches and evaluates techniques for realizing SOT nanodevices using 2D vdW and topological materials, highlighting opportunities and challenges.

Findings

SOT enables low-current magnetic switching.

2D vdW materials offer versatile heterostructure platforms.

Challenges include material integration and efficiency optimization.

Abstract

The manipulation of magnetic properties using either electrical currents or gate bias is the key of future high-impact nanospintronics applications such as spin-valve read heads, non-volatile logic, and random-access memories. The current technology for magnetic switching with spin-transfer torque requires high current densities, whereas gate-tunable magnetic materials such as ferromagnetic semiconductors and multiferroic materials are still far from practical applications. Recently, magnetic switching induced by pure spin currents using the spin Hall and Rashba effects in heavy metals, called spin-orbit torque (SOT), has emerged as a candidate for designing next-generation magnetic memory with low current densities. The recent discovery of topological materials and two-dimensional (2D) van der Waals (vdW) materials provides opportunities to explore versatile 3D-2D and 2D-2D heterostructures with interesting characteristics. In this review, we introduce the emerging approaches to realizing SOT nanodevices including techniques to evaluate the SOT efficiency as well as the opportunities and challenges of using 2D topological materials and vdW materials in such applications.