Analytic approach to transport in superconducting junctions with arbitrary carrier density

TL;DR

This paper develops an analytical framework for superconducting junction transport that remains valid across all carrier densities, including low-density regimes where traditional approximations fail, revealing new phenomena like negative differential conductance.

Contribution

The authors introduce a general analytical approach to superconducting transport that does not depend on the Andreev approximation, applicable to low-carrier-density systems and across the BCS-BEC crossover.

Findings

Subgap current decreases from BCS to BEC regimes.

Pronounced nonlinearities and negative differential conductance near the unitary limit.

Vanishing of MAR current at a critical interaction strength.

Abstract

Particle transport across Josephson junctions is commonly described using a simplifying approximation (often called the Andreev approximation), which assumes that excitations are fixed at the Fermi momentum and only Andreev reflections, with no normal reflections, occur at interfaces. While this approximation is appropriate for superconductors with high carrier density (for which the chemical potential vastly exceeds the pairing gap), it breaks down for low-carrier-density superconductors, such as topological superconductors, doped semiconductors, or superfluid quantum gases. Here, we present a general $analytical$ framework for transport in superconducting junctions that does not rely on this limiting Andreev approximation. We apply our framework to describe transport in junctions between $s$-wave superconductors along the BCS-BEC crossover, which interpolates between the conventional high-carrier-density (BCS-)regime and moderate- as well as low-carrier-density regimes (unitary and BEC regimes), for which the Andreev approximation is not valid. As the system is tuned from the BCS to the BEC regime, the magnitude of a subgap current due to multiple Andreev reflections (MAR) decreases. However, nonlinearities in the current-voltage characteristic become more pronounced near the intermediate unitary limit, giving rise to sharp peaks and dips in the differential conductance with even $negative$ differential conductance at specific voltages. Microscopically, the negative differential conductance is related to the van Hove points in the band structures, at which enhanced normal reflection occurs and that become accessible only when the chemical potential is comparable to or smaller than the pairing gap. The subgap current due to MAR vanishes at a critical interaction strength on the BEC side, which we identify as the splitting point where the particle dispersion changes curvature.