Domain size and charge defects on the polarization switching of antiferroelectric domains

TL;DR

This study uses phase field simulations to explore how domain size and charge defects influence polarization switching in antiferroelectric materials, revealing effects on coercive fields, local domain formation, and hysteresis behavior.

Contribution

It introduces a numerical investigation of charge defect effects on antiferroelectric switching, highlighting their role in local domain nucleation and hysteresis modification.

Findings

Larger initial domain sizes increase coercive electric field.

Charge defects induce local ferroelectric domains.

Charge defects reduce saturation polarization and hysteresis loop area.

Abstract

The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood. In this work, by using the phase field simulation, we have studied the polarization switching property of antiferroelectric domains. Our results indicate that the ferroelectric domains nucleate preferably at the boundaries of the antiferroelectric domains, and antiferroelectrics with larger initial domain sizes possess a higher coercive electric field as demonstrated by hysteresis loops. Moreover, we introduced charge defects into the sample and numerically investigated their influence. It is also shown that charge defects can induce local ferroelectric domains, which could suppress the saturation polarization and narrow the enclosed area of the hysteresis loop. Our results give insights into understanding antiferroelectric phase transformation and optimizing the energy storage property in experiments.