An improved model for describing the net carrier recombination rate in semiconductor devices
M. L. Inche Ibrahim, Anvar A. Zakhidov

TL;DR
This paper introduces a new model for the net carrier recombination rate in semiconductor devices that accounts for electric current flow, improving accuracy over traditional models used in device performance analysis.
Contribution
The paper presents a novel model for carrier recombination in semiconductor devices that considers electric current flow, enhancing the accuracy of device performance simulations.
Findings
The new model aligns better with experimental data.
It improves the accuracy of performance predictions for solar cells and LEDs.
Validation shows significant differences from conventional models.
Abstract
Carrier recombination is a process that significantly influences the performance of semiconductor devices such as solar cells, photodiodes, and light-emitting diodes (LEDs). Therefore, a model that can accurately describe and quantify the net carrier recombination rate in semiconductor devices is important in order to further improve the performance of relevant semiconductor devices. The conventional model for describing the net carrier recombination rate is derived based on the condition that there is no electric current in the considered semiconductor, which is true only when the semiconductor is not part of a semiconductor device, and hence is not connected to an external circuit. The conventional model is adopted and used for describing the net carrier recombination rate in semiconductors that are part of devices (i.e. in semiconductor devices). In this paper, we derive and propose…
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