Second Order Topological Insulator State in Hexagonal Lattices and its Abundant Material Candidates
Shifeng Qian, Cheng-Cheng Liu, Yugui Yao

TL;DR
This paper introduces mechanisms to realize second order topological insulators in hexagonal lattices, identifies real material candidates, and demonstrates their nontrivial topology and protected corner states with large band gaps.
Contribution
It proposes two mechanisms for 2D SOTIs in hexagonal lattices, constructs models, and predicts abundant real material candidates with topological properties.
Findings
Demonstrates nontrivial band topology characterized by $w_2$
Identifies real material candidates with large band gaps up to 3.5 eV
Predicts protected corner states with fractional charge
Abstract
We propose two mechanisms to realize the second order topological insulator (SOTI) state in spinless hexagonal lattices, viz., chemical modification and anti-Kekul\'e/Kekul\'e distortion of hexagonal lattice. Correspondingly, we construct two models and demonstrate the nontrivial band topology of the SOTI state characterized by the second Stiefel-Whitney class in the presence of inversion symmetry () and time-reversal symmetry (). Based on the two mechanisms and using first-principles calculations and symmetry analysis, we predict three categories of real light element material candidates, i.e., hydrogenated and halogenated 2D hexagonal group IV materials XY (X=C, Si, Ge, Sn, Y=H, F, Cl), 2D hexagonal group V materials (blue phosphorene, blue arsenene, and black phosphorene, black arsenene), and the recent experimentally synthesized anti-Kekul\'e/Kekul\'e…
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