Polariton-based quantum memristors

TL;DR

This paper introduces a polariton-based quantum memristor that leverages inter-cavity polariton exchange and atom-cavity detuning to achieve tunable memory, demonstrating hysteresis and plasticity suitable for advanced information processing.

Contribution

It presents a novel quantum memristor design using polaritons, with controllable hysteresis features driven by quantum state initialization.

Findings

Hysteresis characterized by polariton number fluctuations

Memory encoding via dynamical phase

Quantum state initialization controls memristor plasticity

Abstract

Information processing and storing by the same physical system is emerging as a promising alternative to traditional computing platforms. In turn, this requires the realization of elementary units whose memory content can be easily tuned and controlled. Here, we introduce a polariton-based quantum memristor where the memristive nature arises from the inter-cavity polariton exchange and is controlled by a time-varying atom-cavity detuning. A dynamical hysteresis is characterized by the fluctuations in the instantaneous polariton number, where the history information is encoded into a dynamical phase. Using a Lindblad master equation approach, we find that features of the quantum memristor dynamics, such as the area and circulation of the hysteresis loop, showcase a kind of "plasticity" controlled by quantum state initialization. This makes this quantum memristor very versatile for a wide range of applications