Antisymmetric magnetoresistance due to domain wall tilting in perpendicular magnetized films

TL;DR

This paper reports the discovery of antisymmetric magnetoresistance in perpendicular magnetized films caused by domain wall tilting, highlighting the role of domain geometry in nonequilibrium current generation and potential device applications.

Contribution

It demonstrates the link between domain wall tilting and antisymmetric MR, providing a theoretical framework for understanding and designing domain wall electronic devices.

Findings

Antisymmetric MR observed in CoTb films with inhomogeneous magnetization.

Domain wall tilting induces nonequilibrium currents responsible for anomalous MR.

Geometry of domain textures significantly influences the MR behavior.

Abstract

We report the observation of the antisymmetric magnetoresistance (MR) in perpendicular magnetized CoTb films with inhomogeneous magnetization distribution driven by gradient magnetic field. By synchronously charactering the domain pattern evolution during transport measurements, we demonstrate that the nonequilibrium currents in the vicinity of tilting domain walls give rise to such anomalous MR. Moreover, theoretical calculation and analysis reveal that the geometry factor of the multidomain texture plays a dominant role in generating the nonequilibrium current. The explicitly established interplay between the anomalous transport behaviors and the particular domain wall geometry is essential to deepening understanding of the antisymmetric MR, and pave a new way for designing novel domain wall electronic devices.