IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study
Tufan Roy, Masahito Tsujikawa, Masafumi Shirai

TL;DR
This study uses first-principles calculations to evaluate IrCrMnZ Heusler alloys as electrode materials for MgO-based magnetic tunnel junctions, highlighting their high spin polarization, stability, and potential for high-temperature applications.
Contribution
It introduces IrCrMnZ alloys as promising electrode materials for MTJs, demonstrating their electronic properties and stability through first-principles analysis.
Findings
IrCrMnAl and IrCrMnGa have Curie temperatures above 1300 K.
These alloys maintain half-metallicity at the MgO interface.
They exhibit large majority-spin conductance in MTJ configurations.
Abstract
We study IrCrMnZ (Z=Al, Ga, Si, Ge) systems using first-principles calculations from the perspective of their application as the electrode materials of MgO-based MTJs. These materials have highly spin-polarized conduction electrons with partially occupied band, which is important for coherent tunneling in parallel magnetization configuration. The Curie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) as predicted from mean-field-approximation. The stability of ordered phase against various antisite disorders has been investigated. We discuss here the effect of "spin-orbit-coupling" on the electronic structure around Fermi level. Further, we investigate the electronic structure of IrCrMnZ/MgO heterojunction along (001) direction. IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity even at the MgO interface, with no interfacial states at/around Fermi level…
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