Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe
Sonali Baral, Mukesh Kumar Dasoundhi, Indu Rajput, Devendra Kumar,, Archana Lakhani

TL;DR
This study investigates the magneto-transport properties of SnTe, revealing large linear magnetoresistance, evidence of topological surface states, and band degeneracy lifting during the cubic-to-rhombohedral transition.
Contribution
It provides the first detailed analysis of how the cubic-to-rhombohedral transition affects surface states and bulk band degeneracy in SnTe through magneto-transport measurements.
Findings
Large unsaturated linear magnetoresistance of 42% at 8T and 5K.
Observation of Shubnikov-de Haas oscillations indicating topological surface states.
Hall measurements show band degeneracy lifting across the structural transition.
Abstract
We report a comprehensive magneto-transport study on single crystalline p-type topological crystalline insulator (TCI) SnTe, across the cubic-to-rhombohedral (R3m) transition which occurs as a function of temperature. The electrical resistivity of a well-characterized SnTe crystal shows evidence for the cubic-to-rhombohedral structural transition at T 64,K and a carrier density of 1.810 at 77,K. As a function of applied magnetic field perpendicular to the (100) plane, SnTe exhibits a large unsaturated linear magnetoresistance (LMR) reaching a value of 42% at 5K and 8T. LMR is found to have a direct dependence on the mobility and a detailed analysis shows that it follows the classical Parish-Littlewood model of conductivity fluctuations arising from macroscopic inhomogeneity of tellurium interstitial atoms. We also observe SdH oscillations in the…
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