Estimation of the lowest limit of 1/f noise in semiconductor materials

TL;DR

This paper estimates the fundamental lower limit of 1/f noise in semiconductors by relating it to on-off state dynamics and dopant concentration, suggesting the noise limit decreases with fewer dopant centers.

Contribution

It introduces a novel approach to estimate the lowest possible 1/f noise in semiconductors based on intermittent on-off states and the Hooge relation.

Findings

Lowest 1/f noise limit is inversely proportional to dopant concentration

Detection of the lowest noise limit requires minimal dopant centers

1/f noise shows smooth dependence on time

Abstract

A lowest limit of 1/f noise in semiconductor materials has not yet been reported; we do not even know if such a lowest limit exists. 1/f noise in semiconductors has recently been brought into relation with 1/f noise in quantum dots and other materials. These materials exhibit on-off states which are power-law distributed over a wide range of timescales. We transfer such findings to semiconductors, assuming that the g-r process is also controlled by such on-off states. As a result, we obtain 1/f noise which can be expressed in the form of the Hooge relation. Based on the intermittent g-r process, we estimate the lowest limit of 1/f noise in semiconductor materials. We show that this limit is inversely proportional to the dopant concentration; to detect the lowest limit of 1/f noise, the number of centers should be as small as possible. We also find a smooth dependence of 1/f noise and g-r noise on time.