Radiation Hardness Study of the ePix100 Sensor and ASIC under Direct Illumination at the European XFEL

TL;DR

This study evaluates the radiation hardness of the ePix100 detector under direct beam exposure at the European XFEL, revealing its performance degradation thresholds and estimating its operational lifetime for high-intensity photon applications.

Contribution

It provides the first systematic analysis of radiation damage effects on the ePix100a detector under real beam conditions at XFEL, including damage thresholds and lifetime estimates.

Findings

Detector offset and noise increase with radiation dose due to leakage current.

Pixels can saturate immediately after irradiation from dark current effects.

The detector remains functional for several years if beam intensities stay within specified limits.

Abstract

The ePix detector family provides multiple variants of hybrid pixel detectors to support a wide range of applications at free electron laser facilities. We present the results of a systematic study of the influence of radiation induced damage on the performance and lifetime of an ePix100a detector module using a direct attenuated beam of the EuXFEL at 9 keV photon energy and an average power of 10 $\mu$W. An area of 20 x 20 pixels was irradiated with an average photon flux of approx. 7 x $10^{9}$ photons/s to a dose of approximately 760$\pm$65 kGy at the location of the Si/SiO$_2$ interfaces in the sensor. A dose dependent increase in both offset and noise of the ePix100a detector have been observed originating from an increase of the sensor leakage current. Moreover, we observed an effect directly after irradiation resulting in the saturation of individual pixels by their dark current. Changes in gain are evaluated one and half hours post irradiation and suggest damage to occur also on the ASIC level. Based on the obtained results, thresholds for beam parameters are deduced and the detector lifetime is estimated with respect to the requirements to the data quality in order to satisfy the scientific standards defined by the experiments. We conclude the detector can withstand a beam with an energy up to 1 $\mu$J at a photon energy of 9 keV impacting on an area of 1 mm$^2$. The detector can be used without significant degradation of its performance for several years if the incident photon beam intensities do not exceed the detector's dynamic range by at least three orders of magnitude. Our results provide valuable input for the operation of the ePix100a detector at FEL facilities and for the design of future detector technology.