Localized Phonon Densities of States at Grain Boundaries in Silicon
Peter Rez, Tara Boland, Christian Els\"asser, and Arunima Singh

TL;DR
This study calculates phonon densities of states at silicon grain boundaries using molecular dynamics and density functional theory, revealing localized vibrational changes that are unlikely to impact thermal conductivity.
Contribution
It introduces a combined computational approach to analyze localized phonon spectra at grain boundaries in silicon, linking vibrational features to atomic bond variations.
Findings
Optic phonon peak suppression near grain boundaries
Acoustic phonons largely unaffected by boundaries
Intrinsic density of states changes unlikely to influence thermal conductivity
Abstract
Since it is now possible to record vibrational spectra at nanometer scales in the electron microscope it is of interest to explore whether defects such as dislocations or grain boundaries will result in measurable changes of the spectra. Phonon densities of states were calculated for a set of high angle grain boundaries in silicon. Since these boundaries are modeled by supercells with up to 160 atoms, the density of states was calculated by taking the Fourier transform of the velocity-velocity autocorrelation function from molecular dynamics simulations based on new supercells doubled in each direction. In select cases the results were checked on the original supercells with fewer atoms by comparison with the densities of states obtained by diagonalizing the dynamical matrix calculated using density functional theory. Near the core of the grain boundary the height of the optic phonon…
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