An alternative form of Hooge's relation for 1/f noise in semiconductor materials

TL;DR

This paper explores a new form of Hooge's relation for 1/f noise in semiconductor materials, linking intermittency and trap dynamics to noise characteristics, and proposes an alternative formula based on defect centers.

Contribution

It introduces an alternative Hooge relation for 1/f noise based on trap centers and intermittency, expanding understanding of noise origins in semiconductors.

Findings

Derived a Hooge coefficient dependent on g-r noise parameters and intermittency.

Showed the smooth time dependence of the Hooge coefficient due to power-law on-time distribution.

Proposed an alternative 1/f noise formula relating noise to defect centers instead of charge carriers.

Abstract

Single quantum dots and other materials exhibit irregular switching between on and off states; these on-off states follow power-law statistics giving rise to 1/f noise. We transfer this phenomenon (also referred to as on-off intermittency) to the generation and recombination (g-r) process in semiconductor materials. In addition to g-r noise we obtain 1/f noise that can be provided in the form of the Hooge relation. The predicted Hooge coefficient depends on the parameters of the g-r noise and on the parameters of the intermittency. Due to the power-law distribution of the on-times, the coefficient for intermittency shows a smooth dependence on time t. We also suggest an alternative form of the 1/f noise formula by Hooge relating the 1/f noise to the number of centers (such as donor or trap atoms) rather than to the number of charge carriers as defined by Hooge.