Top-Gated Carbon Nanotube FETs from Quantum Simulations: Comparison with Experiments

TL;DR

This paper uses quantum simulations to model top-gated carbon nanotube FETs and compares the results with experimental data, highlighting the importance of detailed electrostatic and electronic structure modeling for accurate predictions.

Contribution

The study demonstrates a quantum simulation approach that accurately reproduces experimental behavior of CNT-FETs, emphasizing the need for detailed electrostatic and band structure modeling.

Findings

Quantum simulations match experimental I-V characteristics

Electrostatic control is crucial for device performance

Detailed electronic band structure modeling improves accuracy

Abstract

We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function (NEGF) quantum transport method coupled with a $\vec{k} \cdot \vec{p}$ description of the electronic structure is demonstrated to achieve excellent agreement with the reported experimental data. Factors influencing the electrostatic control of the channel are investigated and reveal that detailed modeling of the electrostatics and the electronic band structure of the CNT is required to achieve quantitative agreement with experiment.