On the carrier transport and radiative recombination mechanisms in tunneling injection quantum dot lasers

TL;DR

This paper investigates the temperature-dependent electrical and optical behaviors of tunneling injection quantum dot lasers, revealing distinct carrier transport mechanisms and establishing a quantitative relationship between output power and injection parameters.

Contribution

It introduces physical models that differentiate current flow and emission mechanisms across voltage and temperature ranges in TI QD lasers, highlighting the role of the tunneling injection layer.

Findings

Three exponential regimes in I-V characteristics identified.

Carrier transport dominated by tunneling at high bias.

Analytical relationship between power, voltage, and carrier density established.

Abstract

We report temperature-dependent current-voltage (I - V - T) and output light power-voltage or current (P - V - T) or (P - I - T) characteristics of 1550 nm tunneling injection quantum dot (TI QD) laser diodes. Experimental data is accompanied by physical models that distinguish between different current flow and light emission mechanisms for different applied voltages and temperature ranges. Three exponential regimes in the I - V characteristics were identified for low bias levels where no optical radiation takes place. At the lowest bias levels, the diffusion-recombination mechanism based on the classical Shockley-Reid-Hall theory dominates. This is followed, at low and near room temperature, by a combination of weak tunneling and generation-recombination, respectively. In the third exponential region, for all temperatures carrier transport is dictated by strong tunneling, which is characterized by a temperature-independent slope of the I - V curves and a variable ideality factor. The I - V results were compared to a conventional QD laser in which the current flow mechanisms of the first and third types are absent, which clearly demonstrates the key role played by the TI layer. In the post-exponential voltage range, when the diodes are in the high injection regime, the characteristics of the two types of diodes are identical. The typical behavior at the threshold current, where the output power increases fast has a clear signature in the I - V characteristics. Finally, an analytical quantitative relationship is established between the light output power and the applied voltage and current as well as the carrier density participating in radiative recombination.