Voltage-controlled magnetism enabled by resistive switching

TL;DR

This paper introduces a novel method of controlling magnetic anisotropy using resistive switching in ferromagnetic oxides, enabling voltage-controlled magnetism with potential broad material applicability.

Contribution

It demonstrates that resistive switching can induce strong uniaxial magnetic anisotropy, offering a new approach for voltage-controlled magnetic systems.

Findings

Resistive switching creates a transverse insulating barrier.

Voltage-driven barriers induce strong magnetic anisotropy.

Method applicable to a broad range of materials.

Abstract

The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of utilizing resistive switching to control magnetic anisotropy. We study a ferromagnetic oxide that exhibits an electrically triggered metal-to-insulator phase transition producing a volatile resistive switching. This switching occurs in a characteristic spatial pattern: the formation of a transverse insulating barrier inside a metallic matrix resulting in an unusual ferromagnetic/paramagnetic/ferromagnetic configuration. We found that the formation of this voltage-driven paramagnetic insulating barrier is accompanied by the emergence of a strong uniaxial magnetic anisotropy that overpowers the intrinsic material anisotropy. Our results demonstrate that resistive switching is an effective tool for manipulating magnetic properties. Because resistive switching can be induced in a very broad range of materials, our findings could enable a new class of voltage-controlled magnetism systems.