Optical anisotropies of asymmetric double GaAs (001) Quantum Wells
O. Ruiz-Cigarrillo, L.F. Lastras-Mart\'inez, E. A. Cerda-M\'endez, G., Flores-Rangel, C. A. Bravo-Velazquez, R. E. Balderas-Navarro, A., Lastras-Mart\'inez, N.A. Ulloa-Castillo, K. Biermann, and P.V. Santos

TL;DR
This study investigates how asymmetry in double GaAs quantum wells causes in-plane optical anisotropies due to symmetry reduction, with detailed spectroscopic analysis and theoretical calculations illuminating the effects on optical transitions.
Contribution
It identifies and characterizes a new source of optical anisotropies in asymmetric DQWs caused by symmetry reduction from $D_{2d}$ to $C_{2v}$, supported by experimental and theoretical analysis.
Findings
Asymmetric DQWs exhibit increased RAS strength due to symmetry loss.
Heavy- and light-hole mixing is induced by symmetry breakdown.
Reflectance spectra help interpret optical transition energies.
Abstract
In the present work, we were able to identify and characterize a new source of in-plane optical anisotropies (IOAs) occurring in asymmetric DQWs; namely a reduction of the symmetry from to as imposed by asymmetry along the growth direction. We report on reflectance anisotropy spectroscopy (RAS) of double GaAs quantum wells (DQWs) structures coupled by a thin ( nm) tunneling barrier. Two groups of DQWs systems were studied: one where both QWs have the same thickness (symmetric DQW) and another one where they have different thicknesses (asymmetric DQW). RAS measures the IOAs arising from the intermixing of the heavy- and light- holes in the valence band when the symmetry of the DQW system is lowered from to . If the DQW is symmetric, residual IOAs stem from the asymmetry of the QW interfaces; for instance, associated to Ga segregation into the AlGaAs…
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