Semiconductor Epitaxy in Superconducting Templates

TL;DR

This paper presents a novel method for growing high-quality InAs nanowires integrated with TiN superconducting elements on silicon, enabling scalable semiconductor-superconductor hybrid devices with promising electrical properties.

Contribution

The study introduces a new epitaxial growth technique for monolithic integration of InAs nanowires with superconducting TiN on silicon, achieving sharp interfaces and flexible alignment.

Findings

Proximity-induced superconductivity observed in InAs nanowires.

Successful growth of hybrid devices with high interface transparency.

Alignment of nanowires along arbitrary crystallographic directions.

Abstract

Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.