Spatio-temporal evolution of resistance state in simulated memristive networks

TL;DR

This paper simulates memristive networks to understand their collective electrical responses and resistance state evolution, providing insights into how scaling and disorder affect their behavior in neuromorphic applications.

Contribution

It offers a simulation-based analysis of memristive network responses, highlighting differences between homogeneous and heterogeneous systems under various stimuli.

Findings

Heterogeneous networks show distinct resistance state maps compared to homogeneous ones.

Scaling up memristive units introduces disorder that affects collective electrical behavior.

Simulations provide insights into the evolution of resistance states in large memristive assemblies.

Abstract

Originally studied for their suitability to store information compactly, memristive networks are now being analysed as implementations of neuromorphic circuits. An extremely high number of elements is thus mandatory. To surpass the limited achievable connectivity - due to the featuring size - exploiting self-assemblies has been proposed as an alternative, in turn posing more challenges. In an attempt for offering insight on what to expect when characterizing the collective electrical response of switching assemblies, in this work, networks of memristive elements are simulated. Collective electrical behaviour and maps of resistance states are characterized upon different electrical stimuli. By comparing the response of homogeneous and heterogeneous networks, we delineate differences that might be experimentally observed when the number of memristive units is scaled up and disorder arises as an inevitable feature.