Generating extreme electric fields in 2D materials by dual ionic gating

TL;DR

This paper introduces a dual ionic gating transistor that generates record electric fields in 2D materials, enabling exploration of phenomena at ultra-high field strengths exceeding 3.5 V/nm.

Contribution

The study presents a novel dual ionic gating device capable of inducing unprecedented electric fields in 2D materials, surpassing previous limits and enabling new physical phenomena exploration.

Findings

Electric fields >3.5 V/nm achieved across 2D materials.

Field strength sufficient to close the bandgap in trilayer WSe2.

Demonstration of a new method to access ultrastrong electric field effects.

Abstract

We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, thereby producing an intense electric field across the 2DM. We determine the field strength via i) electrical transport measurements and ii) direct measurements of electrochemical potentials of the ILs using semiconducting 2DM, WSe2. The field strength across the material reaches more than 3.5 V/nm, the largest static electric field through any electronic device to date. We demonstrate that this field is strong enough to close the bandgap of trilayer WSe2 driving a semiconductor-to-metal transition. Our approach grants access to previously-inaccessible phenomena occurring in ultrastrong electric fields.