Memristive Charge-Flux Interaction Still Makes It Possible To Find An Ideal Memristor
Frank Zhigang Wang

TL;DR
This paper explores the physical basis of ideal memristors through charge-flux interactions, discusses limitations, proposes solutions for ideal memristor design, and defends the physical reality of memristors against recent criticisms.
Contribution
It demonstrates the memristive nature of charge-flux interaction, discusses limitations, and suggests design strategies for realizing ideal memristors in physical systems.
Findings
Charge-flux interaction is inherently memristive with a nonlinear, monotonic curve.
Limitations include parasitic inductance and bistability in current structures.
Proposed solutions involve structural and material innovations to achieve ideal memristors.
Abstract
In 1971, Chua defined an ideal memristor that links charge q and flux phi. In this work, we demonstrated that the direct interaction between physical charge q and physical flux phi is memristive by nature in terms of a time-invariant phi-q curve being nonlinear, continuously differentiable and strictly monotonically increasing. Nevertheless, this structure still suffers from two serious limitations: 1, a parasitic inductor effect, and 2. bistability and dynamic sweep of a continuous resistance range. Then we discussed how to make a fully-functioning ideal memristor with multiple or an infinite number of stable states and no parasitic inductance, and gave a number of suggestions, such as open structure, nanoscale size, magnetic materials with cubic anisotropy (or even isotropy), and sequential switching of the magnetic domains. At last, we responded to a recent challenge from arXiv.org…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Neural dynamics and brain function · Neural Networks and Applications
