Building programable integrated circuits through disordered Chern insulators

TL;DR

This paper proposes a method to build low dissipation, programmable integrated circuits using disordered Chern insulators, enabling robust, dissipationless electron transport and novel logic gates in topological materials.

Contribution

The study introduces a new approach to constructing programmable, low dissipation circuits with disordered Chern insulators, including novel logic gates and wire connections.

Findings

External gates can program arbitrary wire connections.

Electron transport remains dissipationless and robust.

Seven new basic logic gates are proposed.

Abstract

We study the construction of programable integrated circuits with the help of disordered Chern insulators (CIs) in this letter. Specifically, the schemes for low dissipation logic devices and connecting wires are proposed. We use the external-gate-induced step voltage to construct spatially adjustable channels, where these channels take the place of the conventional wires. Our numerical calculation manifests that the external gates can be adopted to program the arbitrary number of wires ($n$-to-$m$ connections). We find that their electron transport is dissipationless and robust against gate voltage fluctuation and disorder strength. Furthermore, seven basic logic gates distinct from the conventional structures are proposed. Our proposal has potential applications in low power integrated circuits and enlightens the building of integrated circuits in topological materials.