Electric-Field-Controlled Antiferromagnetic Spintronic Devices

TL;DR

This paper reviews recent advances in electric-field control of antiferromagnetic spintronic devices, highlighting new methods, emergent topics, and future prospects for low-power, high-performance spintronics.

Contribution

It provides a comprehensive overview of electric-field modulation techniques and emerging research directions in antiferromagnetic spintronics.

Findings

Electric-field control enables ultra-low power spintronic devices.

Various modulation methods like strain, ionic liquids, and electrochemical migration are reviewed.

Future devices include room-temperature antiferromagnetic tunnel junctions and spin logic devices.

Abstract

In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach to achieving ultra-low power spintronic devices via suppressing Joule heating. In this article, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, are comprehensively reviewed. Various emergent topics such as the Neel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, two-dimensional magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, we envision the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.