Threshold switching in solar cells and a no-scribe photovoltaic technology

TL;DR

This paper demonstrates that thin film CdTe solar cells exhibit threshold switching behavior, leading to a new no-scribe photovoltaic technology by forming conductive filaments, potentially replacing traditional laser scribing methods.

Contribution

It introduces a novel no-scribe PV technology based on threshold switching and filament formation in CdTe solar cells, eliminating the need for laser scribing.

Findings

Threshold switching observed in CdTe solar cells.

Formation of conductive filaments through the cell.

Potential for no-scribe photovoltaic manufacturing.

Abstract

We show that thin film CdTe solar cells exhibit the phenomenon of threshold switching similar to that in phase change and resistive memory. It creates a conductive filament (shunt) through the solar cell reaching the buried electrode, such as the transparent conductive oxide (TCO) in CdTe based photovoltaics (PV). While in the existing PV the buried electrode was routinely contacted via laser scribe filled metals, our work paves a way to an alternative technology of no-scribe PV.