The ferroelectric field-effect transistor with negative capacitance

TL;DR

This paper proposes a novel ferroelectric domain-based FET design with stable, reversible static negative capacitance, achieved through dielectric coating, to enhance transistor performance and overcome power dissipation limits.

Contribution

It introduces a new design for ferroelectric NC FETs utilizing dielectric coating to stabilize negative capacitance and improve device performance.

Findings

Achieves stable static negative capacitance in FETs.

Enhances transistor performance through dielectric coating.

Provides a new approach to overcome Boltzmann tyranny.

Abstract

Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors.