Long-range transport of 2D excitons with acoustic waves
Ruoming Peng, Adina Ripin, Yusen Ye, Jiayi Zhu, Changming Wu,, Seokhyeong Lee, Huan Li, Takashi Taniguchi, Kenji Watanabe, Ting Cao,, Xiaodong Xu, Mo Li

TL;DR
This paper demonstrates that surface acoustic waves can effectively drive long-range, directional transport of interlayer excitons in 2D semiconductors, surpassing diffusion limits and enabling excitonic device applications.
Contribution
It introduces a contact-free method using acoustic waves to control and extend exciton transport in 2D materials, surpassing previous diffusion constraints.
Findings
SAW-driven excitonic transport reaches 20 mm at 100 K
Transport distance exceeds diffusion length by at least ten times
Transition from diffusion-limited to acoustic field-driven regime with temperature
Abstract
Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunability. However, the charge-neutral nature of the excitons leads to weak response to the in-plane electric field and thus inhibits transport beyond the diffusion length. Here, we demonstrate the directional transport of interlayer excitons in bilayer WSe2 driven by the propagating potential traps induced by surface acoustic waves (SAW). We show that at 100 K, the SAW-driven excitonic transport is activated above a threshold acoustic power and reaches 20 mm, a distance at least ten times longer than…
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