Proposal for realizing anomalous Floquet insulators via Chern band annihilation
Carolyn Zhang, Tobias Holder, Netanel H. Lindner, Mark Rudner, Erez, Berg

TL;DR
This paper proposes a method to realize the anomalous Floquet insulator phase in a driven disordered quantum anomalous Hall system by annihilating Chern bands through near-resonant driving, enabling quantized charge pumping.
Contribution
It introduces a novel approach to generate the AFAI phase via Chern band annihilation in a driven, disordered topological insulator, supported by theoretical modeling and scaling analysis.
Findings
A driven, disordered quantum anomalous Hall insulator can host an AFAI phase.
Near-resonant driving localizes critical states and annihilates Chern bands.
The required driving strength can be made arbitrarily small by tuning the frequency close to resonance.
Abstract
Two-dimensional periodically driven systems can host an unconventional topological phase unattainable for equilibrium systems, termed the Anomalous Floquet-Anderson insulator (AFAI). The AFAI features a quasi-energy spectrum with chiral edge modes and a fully localized bulk, leading to non-adiabatic but quantized charge pumping. Here, we show how such a Floquet phase can be realized in a driven, disordered Quantum Anomalous Hall insulator, which is assumed to have two critical energies where the localization length diverges, carrying states with opposite Chern numbers. Driving the system at a frequency close to resonance between these two energies localizes the critical states and annihilates the Chern bands, giving rise to an AFAI phase. We exemplify this principle by studying a model for a driven, magnetically doped topological insulator film, where the annihilation of the Chern bands…
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