Highly superlinear photogalvanic effects in (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$: Probing 3D topological insulator surface states at room temperature

TL;DR

This study reveals highly nonlinear photogalvanic effects in a 3D topological insulator, showing superlinear current increase with radiation intensity and saturation at high levels, linked to electron heating and carrier relaxation.

Contribution

It demonstrates the nonlinear intensity dependence of photogalvanic currents in topological insulators and links these effects to electron heating and relaxation processes at room temperature.

Findings

Superlinear increase of photocurrents with radiation intensity.

Saturation of photocurrents at high intensities.

Nonlinearities reveal Fermi level and relaxation times.

Abstract

We report on the observation of complex nonlinear intensity dependence of the circular and linear photogalvanic currents induced by infrared radiation in compensated (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$ 3D topological insulators. The photocurrents are induced by direct optical transitions between topological surface and bulk states. We show that an increase of the radiation intensity results first in a highly superlinear raise of the amplitude of both types of photocurrents, whereas at higher intensities the photocurrent saturates. Our analysis of the observed nonlinearities shows that the superlinear behavior of the photocurrents is caused by a heating of the electron gas, while the saturation is induced by a slow relaxation of the photoexcited carriers resulting in absorbance bleaching. The observed nonlinearities give access to the Fermi level position with respect to the Dirac point and the energy relaxation times of Dirac fermions providing an experimental room temperature probe for topological surface states.