Transient strain induced electronic structure modulation in a semiconducting polymer imaged by scanning ultrafast electron microscopy
Taeyong Kim, Saejin Oh, Usama Choudhry, Carl Meinhart, Michael L., Chabinyc, and Bolin Liao

TL;DR
This study uses scanning ultrafast electron microscopy to visualize how transient, photo-induced strain dynamically modulates the electronic structure of a semiconducting polymer, revealing potential for opto-electronic property tuning.
Contribution
It demonstrates the capability of SUEM to image and analyze local transient strain effects on electronic structures in polymers at high spatio-temporal resolution.
Findings
Photo-induced strain causes a ring-shaped contrast in SUEM images.
Contrast rise time is approximately 300 ps.
Electronic structure modulation is supported by finite-element analysis.
Abstract
Understanding the opto-electronic properties of semiconducting polymers under external strain is essential for their applications in flexible opto-electronic, light-emitting and photovoltaic devices. While prior studies have highlighted the impact of static strains applied on a macroscopic length scale, assessing the effect of a local transient deformation before structural relaxation occurs is challenging due to the required high spatio-temporal resolution. Here, we employ scanning ultrafast electron microscopy (SUEM) to image the dynamical effect of a photo-induced transient strain in the archetypal semiconducting polymer poly(3-hexylthiophene) (P3HT). We observe that the photo-induced SUEM contrast, corresponding to the local change of secondary electron emission, exhibits a ring-shaped spatial profile with a rise time of ps, beyond which the profile persists in the…
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