Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs

TL;DR

This paper investigates charge transport in highly polar III-nitride semiconductors and GaAs using nonlinear quantum kinetic theory, comparing results with Monte Carlo simulations and experiments to validate the approach.

Contribution

It introduces a validated nonlinear quantum kinetic theory approach for modeling charge transport in highly polar semiconductors, aligning well with experimental and Monte Carlo data.

Findings

Good agreement between NESEF, Monte Carlo, and experimental results

Effective modeling of n-type and p-type materials under various electric fields

Validation of nonlinear quantum kinetic theory for polar semiconductors

Abstract

In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by using nonlinear quantum kinetic theory based on a non-equilibrium statistical ensemble formalism (NESEF). In the present paper, these results are compared with calculations usingMonteCarlo modelling simulations and experimental measurements. Both n-type and p-type materials, in the presence of intermediate to high electric fields, are considered for several temperatures and carrier concentrations.The agreement between the results obtained using nonlinear quantum kinetic theory, with those ofMonte Carlo calculations and experimental data is remarkably good, thus satisfactorily validating the NESEF.