One-pot Liquid-Phase Synthesis of MoS$_2$-WS$_2$ van der Waals Heterostructures for Broadband Photodetection

TL;DR

This paper presents a rapid, impurity-free sonication-assisted method to synthesize large-area MoS$_2$-WS$_2$ van der Waals heterostructures with enhanced broadband photodetection capabilities, suitable for scalable optoelectronic devices.

Contribution

The study introduces a simple, efficient synthesis technique for hybrid 2D heterostructures with confirmed high yield and superior photodetector performance.

Findings

Successful synthesis of MoS$_2$-WS$_2$ heterostructures confirmed by spectroscopy.

Enhanced broadband photoresponse in heterostructure-based photodetectors.

Peak responsivity of ~2.15 A/W at 560 nm wavelength.

Abstract

Two dimensional (2D) van der Waals heterostructures (vdWHs) have their unique potential in facilitating the stacking of layers of different 2D materials for optoelectronic devices with superior characteristics at a reduced cost. However, the fabrication of large area all-2D heterostructures is still challenging towards realizing practical devices. In the present work, we have demonstrated a rapid yet simple, impurity free and highly efficient sonication-assisted chemical exfoliation approach to synthesize hybrid vdWHs based on 2D molybdenum disulphide (MoS$_2$) and tungsten disulphide (WS$_2$), with high yield. Microscopic and spectroscopic studies have confirmed the successful exfoliation of layered 2D materials and formation of their hybrid heterostructure. The co-existence of 2D MoS2 and WS2 in the vdW hybrid is established by optical absorption and Raman shift measurements along with their chemical stiochiometry determined by X-ray photoelectron spectroscopy. The spectral response of the vdWH/Si (2D/3D) heterojunction photodetector fabricated using the as-synthesized material is found to show superior broadband photoresponse compared to that shown by the individual 2D MoS$_2$ and WS$_2$ based devices. The peak responsivity is found to be ~2.15 A/W at a wavelength of ~560 nm for an applied bias of -5 V. The ease of fabrication and superior performance of the chemically synthesized vdWH-based devices have revealed their potential use for large area optoelectronic applications on Si compatible CMOS platforms.