Gate controlled quantum dots in monolayer WSe2

TL;DR

This paper demonstrates the fabrication of gate-controlled quantum dots in monolayer WSe2, highlighting their potential for quantum device applications through experimental and theoretical analysis.

Contribution

It introduces a novel method to create and control quantum dots in monolayer WSe2 using heterostructures and gate voltages, advancing 2D material-based quantum technologies.

Findings

Observation of mesoscopic transport features indicating quantum dot formation

Comparison of experimental data with theoretical models of quantum confinement

Potential for electrical and optical manipulation of quantum states in 2D materials

Abstract

Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model.