First-principles study on the electrical resistivity in zirconium dichalcogenides with multi-valley bands: mode-resolved analysis of electron-phonon scattering
Hitoshi Mori, Masayuki Ochi, Kazuhiko Kuroki

TL;DR
This study uses first-principles calculations to analyze how electron-phonon interactions affect electrical resistivity in zirconium dichalcogenides with multi-valley bands, revealing dominant scattering channels and temperature-dependent behaviors.
Contribution
It provides a detailed mode-resolved analysis of electron-phonon scattering effects on resistivity in ZrS2 and ZrSe2, highlighting the roles of intra-valley acoustic and optical phonons.
Findings
Intra-valley acoustic phonon scattering dominates around 50 K.
Optical phonon scattering becomes significant above 80 K.
Inter-valley scattering has a negligible effect on resistivity.
Abstract
Based on the first-principles calculations, we study the electron-phonon scattering effect on the resistivity in the zirconium dichalcogenides, and , whose electronic band structures possess multiple valleys at conduction band minimum. The computed resistivity exhibits non-linear temperature dependence, especially for , which is also experimentally observed on some TMDCs such as and . By performing the decomposition of the contributions of scattering processes, we find that the intra-valley scattering by acoustic phonons mainly contributes to the resistivity around 50 K. Moreover, the contribution of the intra-valley scattering by optical phonons becomes dominant even above 80 K, which is a sufficiently low temperature compared with their frequencies. By…
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