Optical net gain measurement on Al$_{0.07}$Ga$_{0.93}$N/GaN multi-quantum well

TL;DR

This study measures the net optical gain in AlGaN/GaN multi-quantum wells at room temperature, revealing thresholds, anomalous amplification effects, and estimating a lower laser threshold based on experimental data.

Contribution

First measurement of net gain in AlGaN/GaN quantum wells at room temperature using the variable stripe length method, including analysis of anomalous effects and laser threshold estimation.

Findings

Net gain threshold at 218 and 403 kW/cm² at different sample positions.

Anomalous amplification caused by crack-induced feedback at high pump powers.

Maximum measured gain of 131 cm⁻¹ at 743 kW/cm² pump power.

Abstract

We present net gain measurements at room temperature in Al$_{0.07}$Ga$_{0.93}$N/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measurements were conducted at two different positions on the sample, where the net gain threshold was attained at 218 kW/cm$^{2}$ and 403 kW/cm$^{2}$. At the position with higher threshold, we observed an anomalous amplification of the photoluminescence intensity that occurs for long stripe lengths (superior to 400 $\mu$m) and high pumping power (superior to 550 kW/cm$^{2}$), leading to an overestimation of the gain value. We attribute such a phenomenon to the feedback provided by the reflection from cracks, which were created during the epitaxial growth due to the strong lattice mismatch between different layers. The highest gain value without anomalous amplification was 131 cm$^{-1}$, obtained at the maximum pumping power density of the experimental setup (743 kW/cm$^{2}$). Using the intrinsic efficiency limit of the cathodoluminescence process, we estimate a lower limit for electron beam pumped laser threshold at room temperature of 390 kW/cm$^{2}$ for this multi-quantum well structure.