Even-denominator fractional quantum Hall state in conventional triple-gated quantum point contact

TL;DR

This paper reports the observation of an even-denominator fractional quantum Hall state at 3/2 in a conventional triple-gated quantum point contact on GaAs, highlighting its potential for quantum technology applications.

Contribution

It demonstrates the existence of a 3/2 fractional quantum Hall state in a standard QPC device, emphasizing the role of the center gate in its realization.

Findings

Observation of 3/2 diagonal resistance indicating a fractional quantum Hall state

The 3/2 state was achieved in a conventional, not ultra-high-mobility, GaAs QPC

The center gate is crucial for realizing the 3/2 state

Abstract

The even-denominator states have attracted considerable attention owing to their possible applications in future quantum technologies. In this letter, we first report a 3/2 diagonal resistance, indicating the existence of a 3/2 state in a nanometer-sized triple-gated quantum point contact (QPC) fabricated on a high-mobility (not ultra-high-mobility) single-layer two-dimensional (2D) GaAs wafer. The center gate plays a crucial role in realizing the QPC's 3/2 state. Our observation of the 3/2 state using a conventional QPC device, which is a suitable building block for semiconductor quantum devices, paves a new path for the development of semiconductor-based quantum technologies.