Coherent control of electron spin qubits in silicon using a global field
E. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon, W. H. Lim, F. E., Hudson, T. Day, J. D. Cifuentes, T. Tanttu, C. H. Yang, A. Saraiva, N. V., Abrosimov, H. -J. Pohl, M. L. W. Thewalt, A. Laucht, A. S. Dzurak, J. J. Pla

TL;DR
This paper demonstrates coherent control of electron spin qubits in silicon using a global off-chip magnetic field, advancing scalable quantum computing with silicon technology.
Contribution
It presents the first observation of coherent Rabi oscillations in silicon spin qubits driven by a global dielectric resonator, enabling large-scale qubit control.
Findings
Coherent Rabi oscillations achieved in silicon spin qubits
Global magnetic field can coherently control individual qubits
Pathway established for scalable silicon quantum processors
Abstract
Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technology, realising a quantum computer with the millions of qubits required to run some of the most demanding quantum algorithms poses several outstanding challenges, including how to control so many qubits simultaneously. Recently, compact 3D microwave dielectric resonators were proposed as a way to deliver the magnetic fields for spin qubit control across an entire quantum chip using only a single microwave source. Although spin resonance of individual electrons in the globally applied microwave field was demonstrated, the spins were controlled incoherently. Here we report coherent Rabi oscillations of single electron spin qubits in a planar SiMOS…
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Taxonomy
TopicsQuantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Quantum Computing Algorithms and Architecture
