TL;DR
This paper proposes a robust all-electrical valley filter device using topological interface states in monolayer 2D-Xenes, leveraging large spin-orbit coupling to achieve valley polarization and robustness against disorder.
Contribution
It introduces a novel device design utilizing topological interface states in 2D-Xenes for valley filtering, emphasizing material choice and device geometry for optimal performance.
Findings
Spin-orbit coupling enhances valley filter performance.
Topologically protected states are robust against non-magnetic disorder.
Numerical simulations show perfect conductance due to topological states.
Abstract
We propose a realizable device design for an all-electrical robust valley filter that utilizes spin protected topological interface states hosted on monolayer 2D-Xene materials with large intrinsic spin-orbit coupling. In contrast with conventional quantum spin-Hall edge states localized around the -points, the interface states appearing at the domain wall between topologically distinct phases are either from the or points, making them suitable prospects for serving as valley-polarized channels. We show that the presence of a large band-gap quantum spin Hall effect enables the spatial separation of the spin-valley locked helical interface states with the valley states being protected by spin conservation, leading to a robustness against short-range non-magnetic disorder. By adopting the scattering matrix formalism on a suitably designed device structure, valley-resolved…
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