Integration of hBN quantum emitters in monolithically fabricated waveguides

TL;DR

This paper demonstrates the monolithic integration of hBN quantum emitters with waveguides, achieving efficient on-chip single-photon coupling and detection, advancing the development of integrated quantum photonic devices.

Contribution

It introduces a novel monolithic fabrication approach for integrating hBN quantum emitters with waveguides, with higher coupling efficiency than hybrid methods.

Findings

Successful fabrication of monolithic hBN waveguides with integrated quantum emitters.

Achieved on-chip coupling and detection of single photons.

Framework established for future integrated quantum photonics with hBN.

Abstract

Hexagonal boron nitride (hBN) is gaining interest for potential applications in integrated quantum nanophotonics. Yet, to establish hBN as an integrated photonic platform several cornerstones must be established, including the integration and coupling of quantum emitters to photonic waveguides. Supported by simulations, we study the approach of monolithic integration, which is expected to have coupling efficiencies that are 4 times higher than those of a conventional hybrid stacking strategy. We then demonstrate the fabrication of such devices from hBN and showcase the successful integration of hBN single photon emitters with a monolithic waveguide. We demonstrate coupling of single photons from the quantum emitters to the waveguide modes and on-chip detection. Our results build a general framework for monolithically integrated hBN single photon emitter and will facilitate future works towards on-chip integrated quantum photonics with hBN.