Layer Hall effect in a 2D topological Axion antiferromagnet
Anyuan Gao, Yu-Fei Liu, Chaowei Hu, Jian-Xiang Qiu, Christian, Tzschaschel, Barun Ghosh, Sheng-Chin Ho, Damien B\'erub\'e, Rui Chen, Haipeng, Sun, Zhaowei Zhang, Xin-Yue Zhang, Yu-Xuan Wang, Naizhou Wang, Zumeng Huang,, Claudia Felser, Amit Agarwal, Thomas Ding, Hung-Ju Tien

TL;DR
This paper reports the discovery of a layer Hall effect in a topological antiferromagnetic insulator, revealing a new layer-locked Berry curvature that can be manipulated by an Axion field, advancing the understanding of spatial topological properties.
Contribution
It introduces the concept of a layer Hall effect in a 2D topological AFM, demonstrating layer-specific Berry curvature and its control via an Axion field in MnBi₂Te₄ flakes.
Findings
Observation of layer Hall effect with opposite deflections in top and bottom layers.
Emergence of large layer-polarized anomalous Hall effect under electric field.
Manipulation of layer-locked Berry curvature by Axion E·B field.
Abstract
While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBiTe flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect,…
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