Anomalously low thermal conductivity of two-dimensional GaP monolayers: A comparative study of the group GaX (X = N, P, As)
Chen Shen, Niloofar Hadaeghi, Harish K. Singh, Teng Long, Ling Fan,, Guangzhao Qin, and Hongbin Zhang

TL;DR
This study reveals that 2D GaP monolayers exhibit unexpectedly low thermal conductivity due to buckling-induced phonon anharmonicity, contrasting with GaN and GaAs, and provides fundamental insights into phonon transport mechanisms in GaX materials.
Contribution
First-principles analysis of phonon transport in 2D GaX monolayers, highlighting the role of buckling and electron delocalization in thermal conductivity differences.
Findings
GaP has ultra-low thermal conductivity of 1.52 W/mK.
Buckling structure stabilizes GaP and GaAs, unlike planar GaN.
Strong phonon anharmonicity in GaP reduces thermal conductivity.
Abstract
With the successful synthesis of the two-dimensional (2D) gallium nitride (GaN) in a planar honeycomb structure, the phonon transport properties of 2D GaN have been reported. However, it remains unclear for the thermal transport in Ga-based materials by substituting N to other elements in the same main group, which is of more broad applications. In this paper, based on first-principles calculations, we performed a comprehensive study on the phonon transport properties of 2D GaX (X = N, P, and As) with planar or buckled honeycomb structures. The thermal conductivity of GaP (1.52 Wm-1K-1) is found unexpectedly ultra-low, which is in sharp contrast to GaN and GaAs despite their similar honeycomb geometry structure. Based on PJTE theory, GaP and GaAs stabilize in buckling structure, different from the planar structure of GaN. Compared to GaN and GaAs, strong phonon-phonon scattering is…
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Taxonomy
TopicsThermal properties of materials · Graphene research and applications · Advanced Thermoelectric Materials and Devices
