ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

TL;DR

This paper reports the epitaxial growth of a ZrTe2/CrTe2 heterostructure using molecular beam epitaxy, demonstrating 2D ferromagnetism, anomalous Hall effects, and current-driven magnetization switching, advancing 2D spintronics platforms.

Contribution

It introduces a novel epitaxial vdW heterostructure of ZrTe2 and CrTe2, showing controlled interfaces and functional magnetic properties for spintronics applications.

Findings

Epitaxial growth of ZrTe2/CrTe2 heterostructures with controlled interfaces.

Observation of 2D ferromagnetism and anomalous Hall effect in ultrathin CrTe2.

Demonstration of current-driven magnetization switching in the heterostructure.

Abstract

The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.