Panoply of Ni-Doping-Induced Reconstructions, Electronic Phases, and Ferroelectricity in 1T-MoS$_2$
Rijan Karkee, David A. Strubbe

TL;DR
This paper explores how Ni-doping induces various structural, electronic, and ferroelectric phases in monolayer 1T-MoS$_2$, revealing new phases with enhanced ferroelectricity and potential for diverse applications.
Contribution
It introduces new Ni-doped phases in 1T-MoS$_2$, including ${3} imes {3}$ and ${4} imes {4}$, and characterizes their electronic and ferroelectric properties, expanding the understanding of doped transition metal dichalcogenides.
Findings
Ni-doping creates new distorted phases in 1T-MoS$_2$
The ${3} imes {3}$ phase exhibits 100 times greater ferroelectric polarization
Doped phases include multiferroic semimetals and ferromagnetic polar metals
Abstract
The distorted phases of monolayer 1T-MoS have distinct electronic properties, with potential applications in optoelectronics, catalysis, and batteries. We theoretically investigate the use of Ni-doping to generate distorted 1T phases, and find not only the ones usually reported but also two further phases ( and ), depending on the concentration and the substitutional or adatom doping site. Corresponding pristine phases are stable after dopant removal, which might offer a potential route to experimental synthesis. We find large ferroelectric polarizations, most notably in which -- compared to the recently measured 1T -- has 100 times greater ferroelectric polarization, a lower energy, and a larger bandgap. Doped phases include exotic multiferroic semimetals, ferromagnetic polar metals, and improper ferroelectrics with only in-plane…
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Taxonomy
Topics2D Materials and Applications · Molecular Junctions and Nanostructures · Chalcogenide Semiconductor Thin Films
