Gating orbital memory with an atomic donor

TL;DR

This study investigates how an atomic copper donor influences the orbital memory states of a cobalt atom on black phosphorus, revealing the electric field's role in stabilizing atomic memory states through combined experimental and theoretical analysis.

Contribution

It demonstrates the impact of a single atomic donor on the stability and behavior of orbital memory states, combining STM/STS experiments with density functional theory calculations.

Findings

Atomic Cu donors significantly affect Co atom state favorability.

Local electric fields alter the charging energy and stochastic behavior.

Quantitative analysis of electric field influence on atomic orbital memory.

Abstract

Orbital memory is defined by two stable valencies that can be electrically switched and read-out. To explore the influence of an electric field on orbital memory, we studied the distance-dependent influence of an atomic Cu donor on the state favorability of an individual Co atom on black phosphorus. Using low temperature scanning tunneling microscopy/spectroscopy, we characterized the electronic properties of individual Cu donors, corroborating this behavior with ab initio calculations based on density functional theory. We studied the influence of an individual donor on the charging energy and stochastic behavior of an individual Co atom. We found a strong impact on the state favorability in the stochastic limit. These findings provide quantitative information about the influence of local electric fields on atomic orbital memory.