Implementing Multiple Modes of the Perpendicular Magnetization Switching within a Single Spin Orbit Torque Device

TL;DR

This paper presents a method to implement both unipolar and bipolar perpendicular magnetization switching within a single spin orbit torque device, enabling reconfigurable magnetic memory and logic applications.

Contribution

It introduces a novel approach to switch modes by tuning current amplitude, highlighting the role of field-like torque in controlling magnetization precession and switching modes.

Findings

Both switching modes can be achieved within one device.

Switching mode is controlled by current amplitude.

Field-like torque influences the switching mechanism.

Abstract

Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching. However, it is challenging to integrate multiple modes of magnetization switching together. In this work we propose a method for implementing both unipolar and bipolar switching of the perpendicular magnetization within a single SOT device. The mode of switching could be easily altered by tuning the amplitude of the applied current. We show that the field-like torque plays an important role in the switching process. The field-like torque induces the precession of the magnetization in the case of unipolar switching, whereas it helps to generate an effective z-component torque in the case of bipolar switching. In addition, the influence of key parameters on the mode of switching is discussed. Our proposal could be used to design novel reconfigurable logic circuits in the near future.