Emerging Oscillating Reactions at the Insulator/Semiconductor Solid/Solid Interface via Proton Implantation

TL;DR

This paper introduces a novel solid-state oscillating reaction at the insulator/semiconductor interface driven by proton implantation, revealing ultra-low concentration defect oscillations and proposing a new mechanism based on the Brusselator model.

Contribution

It demonstrates the first all-solid oscillating reaction at an insulator/semiconductor interface using proton implantation, advancing understanding of point-defect dynamics.

Findings

Oscillations occur at the SiO2/Si interface with ultra-low defect concentrations.

Proton implantation effectively drives and monitors the oscillations.

A new mechanism based on the Brusselator model explains the observed reactions.

Abstract

Most oscillating reactions (ORs) happen in solutions. Few existing solid-based ORs either happen on solid/gas (e.g., oxidation or corrosion) or solid/liquid interfaces, or at the all-solid interfaces neighboring to metals or ionic conductors (e.g., electrolysis or electroplate). We report in this paper a new type of all-solid based OR that happens at the insulator (amorphous SiO$_2$)/semiconductor (Si) interface with the interfacial point defects as the oscillating species. This OR is the first example of the point-defect coupled ORs (PDC-ORs) proposed by H. Schmalzried et al. and J. Janek et al. decades ago. We use proton implantation as the driving force of the oscillation, and employ techniques common in semiconductor device characterization to monitor the oscillation in situ. This approach not only overcomes the difficulties associated with detecting reactions in solids, but also accurately measure the oscillating ultra-low concentration ($10^{10}\sim10^{11}$ cm$^{-2}$) of the interfacial charged point-defects. We propose a mechanism for the reported PDC-OR based on the Brusselator model by identifying the interfacial reactions.